Techniques for reading a memory cell with electrically floating body transistor

ABSTRACT

A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell consisting essentially of one transistor. The transistor comprises a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. The device includes data sense circuitry coupled to the memory cell. The data sense circuitry comprises a word line coupled to the gate region and a bit output coupled to the source region or the drain region.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation of U.S. patent application Ser. No. 12/130,011, filed May 30, 2008, now U.S. Pat. No. 8,085,594, which claims priority to U.S. Provisional Patent Application No. 60/932,771, filed Jun. 1, 2007, each of which is hereby incorporated by reference herein in its entirety.

TECHNICAL FIELD

The embodiments relate to a semiconductor device, architecture, memory cell, array, and techniques for controlling and/or operating such device, cell, and array. More particularly, in one aspect, the embodiments relate to a dynamic random access memory (“DRAM”) cell, array, architecture and device, wherein the memory cell includes an electrically floating body configured or operated to store an electrical charge.

BACKGROUND

There is a continuing trend to employ and/or fabricate advanced integrated circuits using techniques, materials and devices that improve performance, reduce leakage current and enhance overall scaling. Semiconductor-on-Insulator (SOI) is a material in which such devices may be fabricated or disposed on or in (hereinafter collectively “on”). Such devices are known as SOI devices and include, for example, partially depleted (PD) devices, fully depleted (FD) devices, multiple gate devices (for example, double or triple gate), and Fin-FET.

One type of dynamic random access memory cell is based on, among other things, the electrically floating body effect of SOI transistors; see, for example, U.S. Pat. No. 6,969,662 (the “'662 patent”). In this regard, the dynamic random access memory cell may consist of a PD or a FD SOI transistor (or transistor formed in bulk material/substrate) having a channel, which is disposed adjacent to the body and separated from the channel by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation layer (or non-conductive region, for example, in a bulk-type material/substrate) disposed beneath the body region. The state of the memory cell is determined by the concentration of charge within the body region of the SOI transistor.

Data is written into or read from a selected memory cell by applying suitable control signals to a selected word line(s), a selected source line(s) and/or a selected bit line(s). In response, charge carriers are accumulated in or emitted and/or ejected from electrically floating body region wherein the data states are defined by the amount of carriers within electrically floating body region. Notably, the entire contents of the '662 patent, including, for example, the features, attributes, architectures, configurations, materials, techniques and advantages described and illustrated therein, are incorporated by reference herein.

Referring to the operations of an N-channel transistor, for example, the memory cell of a DRAM array operates by accumulating in or emitting/ejecting majority carriers (electrons or holes) from body region. In this regard, conventional write techniques may accumulate majority carriers (in this example, “holes”) in body region of memory cells by, for example, impact ionization near source region and/or drain region. The majority carriers may be emitted or ejected from body region by, for example, forward biasing the source/body junction and/or the drain/body junction.

Notably, for at least the purposes of this discussion, logic high or logic “1” corresponds to, for example, an increased concentration of majority carries in the body region relative to an unprogrammed device and/or a device that is programmed with logic low or logic “0”. In contrast, logic low or logic “0” corresponds to, for example, a reduced concentration of majority carries in the body region relative to an unprogrammed device and/or a device that is programmed with logic high or logic “1”.

In one conventional technique, the memory cell is read by applying a small bias to the drain of the transistor as well as a gate bias which is above the threshold voltage of the transistor. In this regard, in the context of memory cells employing N-type transistors, a positive voltage is applied to one or more word lines to enable the reading of the memory cells associated with such word lines. The amount of drain current is determined or affected by the charge stored in the electrically floating body region of the transistor. As such, conventional reading techniques sense the amount of the channel current provided/generated in response to the application of a predetermined voltage on the gate of the transistor of the memory cell to determine the state of the memory cell; a floating body memory cell may have two or more different current states corresponding to two or more different logical states (for example, two different current conditions/states corresponding to the two different logical states: “1” and “0”).

In sum, conventional writing programming techniques for memory cells having an N-channel type transistor often provide an excess of majority carriers by impact ionization or by band-to-band tunneling (gate-induced drain leakage (“GIDL”)). The majority carrier may be removed via drain side hole removal, source side hole removal, or drain and source hole removal, for example, using the back gate pulsing.

Notably, conventional programming/reading techniques often lead to relatively large power consumption (due to, for example, high writing “0” current). The present inventions, in one aspect, are directed to a method which allows reading of memory cells with relatively low power consumption (e.g., both relative to at least the conventional reading techniques).

INCORPORATION BY REFERENCE

Each patent, patent application, and/or publication mentioned in this specification is herein incorporated by reference in its entirety to the same extent as if each individual patent, patent application, and/or publication was specifically and individually indicated to be incorporated by reference.

BRIEF DESCRIPTION OF THE DRAWINGS

In the course of the detailed description to follow, reference will be made to the attached drawings. These drawings show different aspects of the present inventions and, where appropriate, reference numerals illustrating like structures, components, materials and/or elements in different figures are labeled similarly. It is understood that various combinations of the structures, components, materials and/or elements, other than those specifically shown, are contemplated and are within the scope of the present inventions.

Moreover, there are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those permutations and combinations will not be discussed separately herein.

FIG. 1A is a memory cell configured for reading, under an embodiment;

FIG. 1B is a memory cell configured for reading, under an alternative embodiment;

FIG. 2A shows the memory cell transistor configured to be in a holding state, under an embodiment;

FIG. 2B shows the memory cell transistor configured for a read operation, under an embodiment;

FIG. 2C shows the memory cell transistor in a holding state upon completion of the reading operation, under an embodiment;

FIG. 3 shows relative magnitudes and timing of control signal application to the drain and gate of a transistor during read operations, under an embodiment;

FIG. 4 is a trace plot of the spike source current Is, under an embodiment;

FIG. 5 shows a plot of spike source current magnitude versus time during reading operations of a transistor in which the body region is in a logic “1” state and a logic “0” state, under an embodiment;

FIG. 6 shows an electrically floating body transistor, under an embodiment;

FIG. 7A shows electrically floating body transistor schematically illustrated as including a MOS capacitor “component” and an intrinsic bipolar transistor “component”, under an embodiment;

FIG. 7B is an example characteristic curve of electrically floating body transistor, under an embodiment;

FIGS. 8A-8B show various stages of operation of transistor when writing or programming logic “1”, under an embodiment;

FIGS. 9A-9B show various stages of operation of transistor when writing or programming logic “0”, under an embodiment;

FIG. 10 is a flow diagram for forming a transistor, under an embodiment;

FIG. 11 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with only the drain by a third portion of the body region, under an embodiment;

FIG. 12 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with only the drain by a third portion of the body region, under an embodiment; the source region includes a highly-doped (HD) portion and a lightly-doped (LD) portion;

FIG. 13 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with only the source by a second portion of the body region, under an embodiment;

FIG. 14 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with the only the source by a second portion of the body region, under an embodiment; the drain region includes a highly-doped portion and a lightly-doped portion;

FIG. 15 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions comprise LD and/or HD portions, under an embodiment;

FIG. 16 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions are LD, under an embodiment;

FIG. 17 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with both the source and drain regions, and the source region is LD and the drain region is HD, under an embodiment;

FIG. 18 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with both the source and drain regions, and the source region is HD and the drain region is LD, under an embodiment;

FIG. 19 shows an electrically floating body transistor in which the first portion of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions are HD, under an embodiment;

FIGS. 20A and 20B are schematic block diagrams of embodiments of an integrated circuit device including, among other things, a memory cell array, data sense and write circuitry, memory cell selection and control circuitry, according certain aspects of the present inventions; and

FIGS. 21-23 illustrate an embodiment of an exemplary memory array having a plurality of memory cells and employing a separate source line configuration for each row of memory cells, according to certain aspects of the present inventions.

DETAILED DESCRIPTION

There are many inventions described herein as well as many aspects and embodiments of those inventions. In one aspect, the present inventions are directed to a semiconductor device including an electrically floating body. “Electrically floating body” or “floating body” refers to a transistor body which is not coupled to, and is therefore insulated from, power or ground rails within a semiconductor device or integrated circuit (IC) chip. Various levels of charge may therefore accumulate within a floating body of a transistor. Floating-body transistors are a significant characteristic of SOI devices.

In another aspect, the present inventions are directed to techniques to control and/or operate a semiconductor memory cell (and memory cell array having a plurality of such memory cells as well as an integrated circuit device including a memory cell array) having one or more electrically floating body transistors in which an electrical charge is stored in the body region of the electrically floating body transistor. The techniques of the present inventions may employ intrinsic bipolar transistor currents (referred to herein as “source” currents) to control, write and/or read a data state in such a memory cell. In this regard, the present inventions may employ the intrinsic source current to control, write and/or read a data state in/of the electrically floating body transistor of the memory cell.

The present inventions are also directed to semiconductor memory cell, array, circuitry and device to implement such control and operation techniques. Notably, the memory cell and/or memory cell array may comprise a portion of an integrated circuit device, for example, logic device (such as, a microcontroller or microprocessor) or a portion of a memory device (such as, a discrete memory).

FIG. 1A is a memory cell 12 configured for reading, under an embodiment. The reading operations described herein are also referred to as “spike reading” operations. The memory cell 12 is configured at least nearly the same as or representative of numerous other memory cells of a memory array (not shown) to which the memory cell 12 may be coupled. The memory cell 12 includes a transistor 14 having gate 16, body region 18, which is configured to be electrically floating, source region 20 and drain region 22. The body region 18 is disposed between source region 20 and drain region 22. Moreover, body region 18 is disposed on or above region 24, which may be an insulation region (for example, in an SOI material/substrate) or non-conductive region (for example, in a bulk-type material/substrate). The insulation or non-conductive region 24 may be disposed on substrate 26.

Data is written into or read from a selected memory cell 12 by applying suitable control signals to a selected word line(s) 28, a selected source line(s) 30 and/or a selected bit line(s) 32. For example, the gate 16 of a transistor 14 of an embodiment is coupled to a word line 28, the source region 20 is coupled to a source line 30, and the drain region 22 is coupled to a bit line 32. In response to the control signals, charge carriers are accumulated in (write operations) or emitted and/or ejected from (read operations) electrically floating body region 18 wherein the data states are defined by the amount of carriers within electrically floating body region 18.

FIG. 1B is a memory cell 12 configured for reading, under an alternative embodiment. The memory cell 12 includes a transistor 14 having gate 16, body region 18, which is configured to be electrically floating, source region 20 and drain region 22. The body region 18 is disposed between source region 20 and drain region 22. Moreover, body region 18 is disposed on or above region 24, which may be an insulation region (for example, in an SOI material/substrate) or non-conductive region (for example, in a bulk-type material/substrate). The insulation or non-conductive region 24 may be disposed on substrate 26.

Data is written into or read from a selected memory cell 12 by applying suitable control signals to a selected word line(s) 28, a selected source line(s) 30 and/or a selected bit line(s) 32. For example, the gate 16 of a transistor 14 of an embodiment is coupled to a word line 28, the source region 20 is coupled to a bit line 32, and the drain region 22 is coupled to a source line 30. In response to the control signals, charge carriers are accumulated in (write operations) or emitted and/or ejected from (read operations) electrically floating body region 18 wherein the data states are defined by the amount of carriers within electrically floating body region 18.

The memory cell 12 of an embodiment generally operates by accumulating in or emitting/ejecting majority carriers (electrons or holes) from body region 18. In this regard, write operations or techniques may accumulate majority carriers (e.g., “holes”) in body region 18 of memory cell transistors by, for example, impact ionization near source region 20 and/or drain region 22, as described in detail herein. During read operations, the majority carriers may be emitted or ejected from body region 18 by, for example, forward biasing the source/body junction and/or the drain/body junction as described in detail herein.

Writing data into a selected memory cell 12 of an embodiment includes applying suitable control signals to a selected word line(s) 28, a selected source line(s) 30 and/or a selected bit line(s) 32, as described in detail herein. As a result of the body region 18 being electrically insulated from the underlying substrate 26 by an insulating layer 24, the control signals result in data being written to the transistor in the form of charge stored in the body region 18. The stored charge may be referred to as “body charge” but is not so limited. Write operations are described in detail below.

The configuration of the memory cell 12 described herein, which consists essentially of one transistor, is in contrast to body-contacted dynamic random access memory (BCDRAM) cells that include multiple transistors per cell. For example, each BCDRAM cell includes, in addition to a storage transistor, one or more access transistors contacted to a contact of the body region of the storage transistor. The numerous transistors included in the configuration of a BCDRAM cell (an example of which is provided in U.S. Pat. No. 6,111,778) thus makes write and/or read operations different from those described herein for use in the operation of memory cell 12.

Data is read from a memory cell 12 of an embodiment by generally applying suitable control signals to a selected word line(s) 28, a selected source line(s) 30 and/or a selected bit line(s) 32 that cause the body-to-source junction (PN junction) to become forward biased. This condition precipitates an inherent bipolar current spike. The total charge of the spike current has a magnitude proportional to the charge accumulated on the body region 18 of the transistor multiplied by the current gain (beta value) of the inherent bipolar transistor. The current spike is a distorted pulse waveform of relatively short duration. In this manner the effective value of capacitance, in terms of the magnitude of discharge current sensed at a bit line (FIG. 1A-1B, element 32), is enhanced by this parasitic bipolar effect.

FIGS. 2A-2C show read operations of a memory cell 12, under an embodiment. The transistor 14 stores an information bit in the form of an electric charge on or in the body region 18. When a memory cell is implemented in a memory cell array configuration, it may be advantageous to implement a “holding” operation or condition to certain memory cells when programming one or more other memory cells of the array in order to improve or enhance the retention characteristics of such certain memory cells. In this regard, the transistor 14 of the memory cell 12 may be placed in a “holding” state via application of control signals (having predetermined voltages) which are applied to the gate 16 and the source 20 and drain regions 22 of the memory cell transistors which are not involved in the write or read operations.

FIG. 2A shows the memory cell transistor 14 configured to be in a holding state, under an embodiment. The transistor 14 is configured in the holding state by applying control signals having predetermined voltages to gate 16 and source region 20 and drain region 22. The control signals include, for example, gate-to-source voltage Vgs=HOLD, source voltage Vs=0v and drain-to-source voltage Vds=0v, respectively, but are not so limited. For example, such control signals provide, cause and/or induce majority carrier accumulation in an area that is close to the interface between gate dielectric 32 and electrically floating body 18. In this embodiment, it may be preferable to apply a negative gate-to-source voltage Vgs to gate 16 where transistor 14 is an N-channel type transistor 14. The voltage applied to gate 16 of an embodiment is approximately in a range of −0.8 volts to −1.6 volts (e.g., −1.2 volts). The proposed holding condition holds the transistor in an off state, and may provide enhanced retention characteristics.

FIG. 2B shows the memory cell transistor 14 configured for a read operation, under an embodiment. The read operation of an embodiment applies control signals having predetermined voltages to gate 16 and source region 20 and drain region 22 of transistor 14. As an example, the control signals include gate-to-source voltage Vgs=0v, source voltage Vs=0v and drain-to-source voltage Vds=2.2v, respectively, but are not so limited. Such control signals, in combination, induce and/or cause a source current in memory cells 12 that are programmed to logic “1” as described above.

In contrast to the conventional bipolar reading operations of a transistor, which is placed in an on state by applying a relatively higher voltage (e.g., gate-to-source voltage Vgs=−1.0v, Vs=0v and drain-to-source voltage Vds=2.5v, respectively) to the drain, the transistor 14 of an embodiment is placed in an on state during reading by control signals that control the drain-to-source voltage Vds to be approximately in the range of one (1) volt to 2.2 volts. Nearly simultaneous with or subsequent to application of the increased drain-to-source voltage Vds voltage, the gate-to-source voltage Vgs is raised from a negative voltage level to approximately 0 volts via a pulse applied to the gate. The application of the signal combination to the drain and gate results in the emission of a spike source current, also referred to herein as a spike reading or bipolar reading current, from the transistor body. While the example described herein uses a drain-to-source voltage Vds of approximately 2.2 volts, measurements show that the spike reading described herein functions with drain-to-source voltages Vds as low as approximately one (1) volt.

The application of the pulsed control signal (drain-to-source voltages Vds) causes electrons to flow from the source region 20 into the body region 18 of the transistor 14, but bipolar current does not flow because the body potential is too low as a result of the lower gate voltage (e.g., drain-to-source voltage Vgs is approximately in the range of −0.8 volts to −1.2 volts). The application of the pulse at the gate (e.g., gate-to-source voltage Vgs controlled to approximately 0 volts) causes an increase in the body potential as a result of capacitive coupling (the holes in the transistor body are repelled away from the gate region). The increased body potential turns the transistor “on” and causes source current to flow in the body region 18. The electrons entering the body region 18 from the source region 20 are recombined with the holes in the body region 18. This results in the spike source current. As recombination progresses, holes are removed from the body region 18 and the body potential decreases to the point below which bipolar current results and the bipolar current consequently ceases. FIG. 2C shows the memory cell transistor 14 in a holding state upon completion of the reading operation, under an embodiment.

FIG. 3 shows relative magnitudes and timing of control signal application to the drain 22 and gate 16 of a transistor 14 during read operations, under an embodiment. The voltage level of the spike reading pulse 302 (drain-to-source voltage Vds) applied to the drain 22 of an embodiment, as described above, is relatively less than the conventional bipolar reading pulse 302C. Similarly, the voltage level of the control signal 304 applied to the gate 16 (gate-to-source voltage Vgs) of an embodiment, as described above, is approximately zero. The reduced voltage applied to the drain 22 (relative to the bipolar reading pulse) in combination with a gate voltage that is approximately zero results in decreased power consumption of a circuit including the transistor during read operations when compared with conventional bipolar reading operations or techniques.

The reading operations of an embodiment result in a spike reading current Is 306 or spike source current Is, which is sensed at a bit line coupled to the transistor, as described above. The spike source current Is 306 is in contrast to the bipolar reading current 306C resulting from conventional bipolar reading operations. The magnitude of the charge of the spike source current Is 306 is determined approximately as: Qs=β×Qstore, where Qs represents the area under the spike source current curve, Qstore represents the amount of charge stored in the body region of the transistor, and β represents the transistor beta or current gain. Thus, the bipolar current flowing through the body region 18 during reading is relatively higher because the charge stored in the body region 18 is multiplied by the transistor beta. FIG. 4 is a trace plot of the spike source current Is 306, under an embodiment. FIG. 5 shows a plot of spike source current Is magnitude versus time during reading operations of a transistor in which the body region 18 is in a logic “1” state and a logic “0” state, under an embodiment.

The spike reading operations of an embodiment thus allow the data state of memory cell 12 to be read and/or determined by applying control signals as described above. Such control signals, in combination, induce and/or cause a spike source current in memory cells 12 that are programmed to logic “1” as described above. As such, sensing circuitry (for example, a cross-coupled sense amplifier), which is coupled to transistor 14 (for example, drain region 22) of memory cell 12, senses the data state using primarily and/or based substantially on the source current. Notably, for those memory cells 12 that are programmed to logic “0”, such control signals induce, cause and/or produce little to no source current (for example, a considerable, substantial or sufficiently measurable source current).

Thus, in response to read control signals, electrically floating body transistor 14 generates a source current which is representative of the data state of memory cell 12. Where the data state of the transistor is logic high or logic “1”, electrically floating body transistor 14 provides a substantially greater source current than where the data state is logic low or logic “0” (FIG. 5). Electrically floating body transistor 14 may provide little to no source current when the data state is logic low or logic “0”. As discussed in more detail below, data sensing circuitry determines the data state of the memory cell based substantially on the source current induced, caused and/or produced in response to the read control signals.

More specifically, and with reference to the word lines 28 and bit lines 32 coupled to memory cell transistors 14 (FIGS. 1A-1B), when a spike read operation is initiated in an embodiment, the voltage on a word line 28 coupled to the gate is pulled from a negative voltage level (e.g., approximately in the range of −0.8 volts to −1.2 volts) to a level of approximately zero. If the body region 18 of the transistor 14 has been charged by a previous write cycle, the source-body junction of the transistor 14 will be forward biased since the body 18 (P-type material in this example) will be at a higher potential than the source 20 (N-type material in this example). The result is a forward biased emitter-base junction of the inherent parasitic bipolar transistor within the transistor 14.

The inherent bipolar transistor will react to a forward biased emitter-base junction in a manner that causes the charge on the body region 18 of the transistor to swiftly discharge and consequently drop the voltage level on the bit line 32. The amount of charge removed (detected on the bit line) will be the amount of charge stored in the body 18 of the transistor 14 just prior to the read multiplied by the current gain or “beta” of the inherent bipolar transistor. The resulting voltage dip on the bit line 32 will be detected by a sense amplifier (not shown) as a logic “1”. A negative-to-zero voltage transition on the word line 28 when the body 18 of the transistor 14 is discharged (logic “0” written by the previous write cycle) will have no effect on the read bit line and will consequently read as a logic “0”.

The voltage levels described here as control signals to implement the read operations are provided merely as examples, and the embodiments described herein are not limited to these voltage levels. The indicated voltage levels may be relative or absolute. Alternatively, the voltages indicated may be relative in that each voltage level, for example, may be increased or decreased by a given voltage amount (for example, each voltage may be increased or decreased by 0.5, 1.0 and 2.0 volts) whether one or more of the voltages (for example, the source, drain or gate voltages) become or are positive and negative.

FIG. 6 shows an electrically floating body transistor 14, under an embodiment. The transistor 14 is used in memory cells and memory arrays as described above with reference to FIGS. 1-5 and elsewhere herein. The transistor 14 includes a body region 18 configured to be electrically floating. The body region 18 includes three portions or regions 18-1/18-2/18-3 that collectively define the electrically floating body 18. Each of the three portions 18-1/18-2/18-3 comprises the same or similar material (e.g., P-type in this example). The transistor 14 includes a gate 16 disposed over the first portion 18-1 of the body region 18. A gate dielectric 32 (e.g., gate oxide) is disposed between the gate 16 and the body region 18, and spacers SP are adjacent the gate dielectric 32.

A source region 20 adjoins a second portion 18-2 of the body region 18; the second portion 18-2 of the body region is adjacent the first portion 18-1 and separates the source region 20 from the first portion 18-1. A drain region 22 adjoins a third portion 18-3 of the body region 18; the third portion 18-3 of the body region is adjacent the first portion 18-1 and separates the drain region 22 from the first portion 18-1. The source region 20 and/or drain region 22 is created using conventional doping or implantation techniques but is not so limited. The second portion 18-2 and third portion 18-3 of the body region function to electrically “disconnect” (e.g., disconnect any charge that may accumulate, disconnect any inversion channel that may form) in the first portion 18-1 from one or more of the source 20 and the drain 22 as described in detail below.

An inversion channel is generated in the body region of conventional MOSFET devices in response to the application of control signals to the MOFSET. Once formed the inversion channel provides a continuous electrical channel from the source region to the body region. The inversion channel of conventional devices spans the entire body region as a result of the source and drain regions being configured, relative to the gate, to each underlie the gate. In this manner, application of the appropriate gate voltage to a conventional device causes the inversion channel to form a continuous electrical channel from the source to the drain region.

In contrast to conventional MOSFET devices, however, the source 20 and/or drain 22 regions of an embodiment are configured so that no portion of the source 20 and/or drain 22 regions is positioned under the gate 16. Configuration of the source 20 and/or drain 22 regions of an embodiment includes configuration through control of the shape and/or size of the doped source 20 and/or doped drain 22 regions of the transistor. Because only the first portion 18-1 of the body region is under the gate 16, charge that may accumulate or an inversion channel that may form is found only in the first portion 18-1 when the appropriate control signal is applied to the gate 16. No charge is accumulated and no inversion channel is formed in the second portion 18-2 and/or third portion 18-3 because these portions do not underlie the gate 16. The second portion 18-2 and/or third portion 18-3 therefore cause accumulated charge if any (or inversion channel if formed) to be discontinuous with the source region 20 and/or drain region 22.

As a result of the application of gate voltage to transistor 14, charge builds up in the first portion 18-1 of the body region 18, but current does not flow in the body region 18 because of the absence of accumulated charge and/or a continuous inversion channel between the source and drain regions. The discontinuous configuration of the first portion 18-1 of the body region relative to the source and drain regions therefore acts as an “open circuit” relative to the flow of current between the source 20 and drain 22 regions. Any charge present in the body region 18 thus causes transistor 14 to behave like a capacitor because the region of charge in the body 18-1 is disconnected from the source 20 and/or drain 22 regions.

FIG. 7A shows electrically floating body transistor 14 schematically illustrated as including a MOS capacitor “component” and an intrinsic bipolar transistor “component”, under an embodiment. In one aspect, the present inventions employ the intrinsic bipolar transistor “component” to program/write as well as read memory cell 12. In this regard, the intrinsic bipolar transistor generates and/or produces a source or bipolar transistor current which is employed to program/write the data state in memory cell 12 and read the data state of memory cell 12. Notably, in this example embodiment, electrically floating body transistor 14 is an N-channel device. As such, majority carriers 34 are “holes”.

The bipolar transistor 14 of an embodiment has a floating body, meaning the potential is not fixed or “floating”. The potential for example depends on the charge at the gate. A conventional bipolar transistor requires each of base current, emitter current, and collector current for proper operation. Any base of the transistor 14 in this embodiment, however, is floating and not fixed because there is no base contact as found in conventional bipolar FETs; the current in this transistor is therefore referred to herein as a “source” current produced by impact ionization in the body region as described below.

FIG. 7B is an example characteristic curve of electrically floating body transistor 14, under an embodiment. The characteristic curve shows a significant increase in source current (e.g., “log I”) at and above a specific threshold value of the potential difference between applied source voltage and applied drain voltage (“source-drain potential difference”). The reason for this is that a voltage differential at or above a certain threshold generates a high electric field in the body region. The high electric field results in impact ionization in the first portion 18-1 of the body region 18, a process during which electrons or particles with enough energy generate majority carriers i.e. holes. The impact ionization drives majority carriers to the body region, which increases the body potential, while any minority carriers flow to the drain (or source) region. The increased body potential results in an increase in source current in the body region; thus, the excess majority carriers of the body region generate source current of transistor 14 of an embodiment.

FIGS. 8A-8B show operation of transistor 14 when writing or programming a logic “1”, under an embodiment. The transistor 14 of this embodiment is an N-channel or nMOS FET, but is not so limited; transistor 14 may be a P-channel or pMOS FET in an alternative embodiment. The N-channel device includes source 20 and drain 22 regions comprising N+-type material while the body region 18 comprises a P-type material.

A logic “1” programming operation of an embodiment includes a two stage control signal application during which the gate voltage is changed from a first voltage level to a second voltage level. In operation, when writing or programming logic “1”, in one embodiment, control signals having predetermined voltages (for example, Vg=0.5v, Vs=0v, and Vd=2.5v) are initially applied during stage one to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12 (FIG. 8A). The stage one control signals may result in an accumulation of minority carriers (not shown) in the electrically floating body 18. As a result of the polarity (e.g., positive) of the control signal applied to the gate with the stage one control signals, any minority carriers that happen to be present in the body region 18 accumulate in the first portion 18-1 of the body 18. The minority carriers may accumulate in an area of the first portion 18-1 under the gate, but are not so limited.

The physical behavior in the first portion 18-1 of the body 18 in response to the stage one control signals of an embodiment is in contrast to conventional transistor devices in which an inversion channel (also referred to as an “N-channel”) forms under the gate in an area that is close to the interface between gate dielectric 32 and electrically floating body 18. The inversion channel is of the same type as the source and drain regions (e.g., N-type in an nMOS FET) and functions to electrically couple the source and drain regions.

The inversion channel, however, is not generally formed in the transistor 14 of an embodiment and, additionally, the accumulation of minority carriers in the first portion 18-1 of the body if any is discontinuous with the source 20 and/or drain 22 regions of the device. The reason that no inversion channel is formed in the transistor 14 is because, as the first portion 18-1 of the body 18 is electrically “disconnected” from the source 20 and drain 22 regions, the time required to create an inversion channel during a programming operation is quite long relative to a writing time for example. Therefore, considering an example writing time of an embodiment approximately in a range of 1-10 nanoseconds, and considering the time required for generation of an inversion channel in the “disconnected” first portion 18-1 of the body is much longer than 10 nanoseconds, an inversion channel is not generally created in the transistor 14 during typical programming operations. Similarly, relatively few or no minority carriers accumulate in the body region.

Furthermore, even if an inversion channel were to form in the first portion 18-1 of the body region as a result of the gate voltage, the inversion channel would not form in the second 18-2 and third 18-3 portions of the body region because these regions 18-2/18-3 are not under the gate. Therefore, any inversion channel formed under the embodiments described herein would be “disconnected” from or discontinuous with the source 20 and drain 22 regions.

The lack of an inversion channel or discontinuous inversion channel (if one were to form) of the transistor of an embodiment is in contrast to conventional transistors in which the inversion channel forms and spreads from the source to the drain and provides conductivity of the transistor. However, the configuration of these conventional devices is such that the gate overlays the entire body region between the source and drain regions, and the programming times are of a length that ensures formation of an inversion channel when appropriate voltages are applied, thereby creating a continuous inversion channel that “connects” the source and drain regions upon application of the appropriate polarity signal at the gate.

The stage one control signals also generate or provide a source current in electrically floating body region 18 of transistor 14. More specifically, the potential difference between the source voltage and the drain voltage (e.g., 2.5 volts) is greater than the threshold required to turn on the bipolar transistor. Therefore, source current of the transistor causes or produces impact ionization and/or the avalanche multiplication phenomenon among particles in the electrically floating body region 18. The impact ionization produces, provides, and/or generates an excess of majority carriers 806 (FIG. 8B) in the electrically floating body region 18 of transistor 14 of memory cell 12 as described above.

Notably, it is preferred that the source current responsible for impact ionization and/or avalanche multiplication in electrically floating body region 18 is initiated or induced by the control signal applied to gate 16 of transistor 14 along with the potential difference between the source 20 and drain 22 regions. Such a control signal may induce channel impact ionization which raises or increases the potential of body region 18 and “turns on”, produces, causes and/or induces a source current in transistor 14. One advantage of the proposed writing/programming techniques is that a large amount of the excess majority carriers 806 may be generated and stored in electrically floating body region 18 of transistor 14.

The stage two control signals are subsequently applied to the transistor when writing or programming logic “1” as described above. The stage two control signals are control signals having predetermined voltages (for example, Vg=−1.0v, Vs=0v, and Vd=2.5v) applied to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12 (FIG. 8B) subsequent to stage one. As a result of the polarity (e.g., negative) of the control signal applied to the gate with the stage two control signals, the majority carriers 806 of the body region 18 accumulate near the surface of the first portion 18-1 of the body region (FIG. 8B). The polarity of the gate signal (e.g., negative) combined with the floating body causes he majority carriers 806 to become trapped or “stored” near the surface of the first portion 18-1 of the body region. In this manner the body region 18 of the transistor “stores” charge (e.g., equivalently, functions like a capacitor). Thus, in this embodiment, the predetermined voltages of the stage one and stage two control signals program or write logic “1” in memory cell 12 via impact ionization and/or avalanche multiplication in electrically floating body region 18.

FIGS. 9A-9B show operation of transistor 14 when writing or programming logic “0”, under an embodiment. A logic “0” programming operation of an embodiment includes a two stage control signal application during which the gate voltage is changed from a first voltage level to a second voltage level. In operation, when writing or programming logic “0”, in one embodiment, control signals having predetermined voltages (for example, Vg=0.5v, Vs=0.5v, and Vd=2.5v) are initially applied during stage one to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12 (FIG. 9A). The stage one control signals may result in an accumulation of minority carriers (not shown) in the electrically floating body 18. More specifically, as a result of the polarity (e.g., positive) of the control signal applied to the gate with the stage one control signals, any accumulation of minority carriers occurs under the gate 16 in the first portion 18-1 of the body region, in an area that is close to the interface between gate dielectric 32 and electrically floating body 18 as described above. Any minority carriers that accumulate are in the first portion 18-1 of the body region as a result of the gate voltage, and thus do not accumulate in the second 18-2 and third 18-3 portions of the body region. Therefore, the accumulated charge of the body region 18 is discontinuous with the source 20 and drain 22 regions.

The potential difference between the source voltage and the drain voltage (e.g., 2.0 volts) of the stage one control signals, however, is less than the threshold required to turn on transistor 14. Consequently, no impact ionization takes place among particles in the body region 18 and no bipolar or source current is produced in the electrically floating body region 18. Thus, no excess of majority carriers are generated in the electrically floating body region 18 of transistor 14 of memory cell 12.

The stage two control signals are subsequently applied to the transistor 14 when writing or programming logic “0” as described above. The stage two control signals are control signals having predetermined voltages (for example, Vg=−1.0v, Vs=0.5v, and Vd=2.5v) applied to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12 (FIG. 9B) subsequent to stage one. The polarity (e.g., negative) of the gate signal may result in any minority carriers that accumulate being removed from electrically floating body region 18 of transistor 14 via one or more of the source region 20 and the drain region 22. Furthermore, the polarity of the gate signal (e.g., negative) causes any minority carriers remaining in the body region 18 to be trapped or “stored” near the surface of the first portion of the body region 18. The result is an absence of excess majority carriers in the body region 18 so that, in this manner, the predetermined voltages of the stage one and stage two control signals program or write logic “0” in memory cell 12.

A logic “0” programming operation of an alternative embodiment includes a two stage control signal application during which the gate voltage is changed from a first voltage level to a second voltage level. In operation, when writing or programming logic “0”, in this alternative embodiment, control signals having predetermined voltages (for example, Vg=0v, Vs=0v, and Vd=0v) are initially applied during stage one to gate 16, source region 20 and drain region 22 (respectively) of transistor 14 of memory cell 12.

The voltage levels described here as control signals to implement the write operations are provided merely as examples, and the embodiments described herein are not limited to these voltage levels. The control signals increase the potential of electrically floating body region 18 which “turns on”, produces, causes and/or induces a source current in the transistor of the memory cell. In the context of a write operation, the source current generates majority carriers in the electrically floating body region which are then stored. In the context of a read operation, the data state may be determined primarily by, sensed substantially using and/or based substantially on the source current that is responsive to the read control signals, as described above, and significantly less by the interface channel current component, which is less significant and/or negligible relatively to the bipolar component.

Accordingly, the voltage levels to implement the write operations are merely examples of control signals. Indeed, the indicated voltage levels may be relative or absolute. Alternatively, the voltages indicated may be relative in that each voltage level, for example, may be increased or decreased by a given voltage amount (for example, each of the gate, source, and drain voltage may be increased or decreased by 0.5, 1.0 and 2.0 volts) whether one or more of the voltages (for example, the source, drain or gate voltages) become or are positive and negative.

FIG. 10 is a flow diagram for forming transistor 14, under an embodiment. Transistor 14 is formed, generally, by forming 1002 a semiconductor on an insulator. An insulating layer and a gate is formed 1004 over a first portion of the semiconductor. Spacers are formed 1006 over a second portion and a third portion of the semiconductor, and the spacers adjoin the insulating layer. The first portion, second portion, and third portion of the semiconductor collectively form the floating body region. Formation of transistor 14 continues by forming 1008 a source region through implantation of an impurity into a fourth portion of the semiconductor after forming the spacers. The fourth portion of the semiconductor is adjacent the second portion. A drain region is also formed 1008 by implanting the impurity into a fifth portion of the semiconductor after forming the spacers. The fifth portion of the semiconductor is adjacent the third portion.

More specifically, in fabricating transistor 14, the gate is defined and used as a mask during implantation of the semiconductor to form the source and drain regions of the device. The spacers are then formed prior to any implantation or doping of the semiconductor so that all implantation of the semiconductor (e.g., implantation to form the source and drain) is performed after formation of the spacers. This is in contrast to conventional semiconductor processes in which a gate is formed, followed by a first implantation process (e.g., to form a lightly-doped portion of the source and drain regions), followed by formation of the spaces, and followed by a second implantation process (e.g., to form a highly-doped portion of the source and drain regions).

As a result of implanting only after formation of the spacers, the doping profiles that result in creation of the source and/or drain region are configured so that the body region includes the second 18-2 and/or third 18-3 portions and thus extends beyond an extended lateral boundary of the gate. The second 18-2 and/or third 18-3 portions of the body region function to prevent any inversion channel formation through the entire body region of the device because the area of the body region in which the channel forms under the gate is not continuous with the source and drain regions, as described above. Therefore, upon application of a gate voltage that is appropriate to material of the body region, charge accumulates in the body region of the device, but current cannot flow between the source and drain regions because no inversion channel is formed between the source and/or drain and any accumulated charge is disconnected from the source and/or drain.

The transistor devices of various alternative embodiments can provide a discontinuous region of any accumulated charge in the body by disconnecting the first portion of the body as described herein at the source region, the drain region, or both the source and drain regions. Further, various doping densities (e.g., very light, light, high, and very high doping) and/or profiles can be used in the source, body, and drain regions of the transistor 14. Examples follow of various alternative embodiments.

FIG. 11 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with only the drain by a third portion 18-3 of the body region, under an embodiment.

FIG. 12 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with only the drain by a third portion 18-3 of the body region, under an embodiment. The source region includes a highly-doped (HD) portion and a lightly-doped (LD) portion.

FIG. 13 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with only the source by a second portion 18-2 of the body region, under an embodiment.

FIG. 14 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with the only the source by a second portion 18-2 of the body region, under an embodiment. The drain region includes a highly-doped portion and a lightly-doped portion.

FIG. 15 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions comprise LD and/or HD portions, under an embodiment.

FIG. 16 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions are LD, under an embodiment.

FIG. 17 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with both the source and drain regions, and the source region is LD and the drain region is HD, under an embodiment.

FIG. 18 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with both the source and drain regions, and the source region is HD and the drain region is LD, under an embodiment.

FIG. 19 shows an electrically floating body transistor 14 in which the first portion 18-1 of the body region is made discontinuous with both the source and drain regions, and each of the source and drain regions are HD, under an embodiment.

The programming techniques described above may consume less power relative to conventional techniques. The reduced power consumption relates to the programming techniques of the present inventions being implemented without employing a back gate terminal, thereby reducing or eliminating the flow of any source current in the device when the device is in an “off” state. Furthermore, the current for writing or programming and/or reading operations may be smaller when compared to such conventional techniques.

The gate oxide thickness in conventional devices is required to be substantial in order to not be broken down by the high electric field potential. The high electric field potential results from the relatively high potential difference required between the source and drain regions during write operations. In contrast, however, the embodiments of transistor 14 described herein produce a relatively lower potential difference between the source and drain regions during write operations. The lower potential difference results from the device configuration described above which includes an increased distance between the source and drain regions resulting from the configuration (e.g., size, shape, etc.) of the source and drain regions relative to the gate region. Because the electric field potential is reduced significantly with this design, the gate oxide region can be thinner.

As mentioned above, the embodiments described herein may be implemented in an IC device (for example, a discrete memory device or a device having embedded memory) including a memory array having a plurality of memory cells arranged in a plurality of rows and columns wherein each memory cell includes an electrically floating body transistor. The memory arrays may comprise N-channel, P-channel and/or both types of transistors. Indeed, circuitry that is peripheral to the memory array (for example, data sense circuitry (for example, sense amplifiers or comparators), memory cell selection and control circuitry (for example, word line and/or source line drivers), as well as row and column address decoders) may include P-channel and/or N-channel type transistors.

For example, with reference to FIGS. 20A and 20B, the integrated circuit device may include array 10, having a plurality of memory cells 12, data write and sense circuitry 36, and memory cell selection and control circuitry 38. The data write and sense circuitry 36 reads data from and writes data to selected memory cells 12. In one embodiment, data write and sense circuitry 36 includes a plurality of data sense amplifiers. Each data sense amplifier receives at least one bit line 32 and an output of reference generator circuitry (for example, a current or voltage reference signal). In one embodiment, the data sense amplifier may be a cross-coupled type sense amplifier as described and illustrated in the Non-Provisional U.S. patent application Ser. No. 11/299,590 (U.S. Patent Application Publication US 2006/0126374), filed by Waller and Carman, on Dec. 12, 2005, and entitled “Sense Amplifier Circuitry and Architecture to Write Data into and/or Read Data from Memory Cells”, the application being incorporated herein by reference in its entirety) to sense the data state stored in memory cell 12 and/or write-back data into memory cell 12.

The data sense amplifier may employ voltage and/or current sensing circuitry and/or techniques. In the context of current sensing, a current sense amplifier may compare the current from the selected memory cell to a reference current, for example, the current of one or more reference cells. From that comparison, it may be determined whether memory cell 12 contained logic high (relatively more majority carries 34 contained within body region 18) or logic low data state (relatively less majority carries 28 contained within body region 18). Notably, the present inventions may employ any type or form of data write and sense circuitry 36 (including one or more sense amplifiers, using voltage or current sensing techniques, to sense the data state stored in memory cell 12) to read the data stored in memory cells 12 and/or write data in memory cells 12.

Memory cell selection and control circuitry 38 selects and/or enables one or more predetermined memory cells 12 to facilitate reading data from and/or writing data to the memory cells 12 by applying a control signal on one or more word lines 28. The memory cell selection and control circuitry 38 may generate such control signals using address data, for example, row address data. Indeed, memory cell selection and control circuitry 38 may include a conventional word line decoder and/or driver. There are many different control/selection techniques (and circuitry) to implement the memory cell selection technique. Such techniques, and circuitry, are well known to those skilled in the art. All such control/selection techniques, and circuitry, whether now known or later developed, are intended to fall within the scope of the present embodiments.

The present inventions may be implemented in any architecture, layout, and/or configuration comprising memory cells having electrically floating body transistors. For example, in one embodiment, memory array 10 including a plurality of memory cells 12 having a separate source line for each row of memory cells (a row of memory cells includes a common word line connected to the gates of each memory cell of the row). (See, for example, FIGS. 24-26). The memory array 10 may employ one or more of the example programming, reading and/or holding techniques described above.

In one embodiment, the present inventions are implemented in conjunction with a two step write operation whereby all the memory cells of a given row are written to a predetermined data state by first executing a “clear” operation, whereby all of the memory cells of the given row are written or programmed to logic “0”, and thereafter selective memory cells of the row are selectively write operation to the predetermined data state (here logic “1”). The present inventions may also be implemented in conjunction with a one step write operation whereby selective memory cells of the selected row are selectively written or programmed to either logic “1” or logic “0” without first implementing a “clear” operation.

With reference to FIGS. 21 and 22, memory cells 12 may be programmed using the two step operation wherein a given row of memory cells are written to a first predetermined data state by first executing a “clear” operation (which, in this example embodiment, all of the memory cells of the given row are written or programmed to logic “0”) and thereafter selected memory cells are written to a second predetermined data state (i.e., a selective write operation to the second predetermined data state). The “clear” operation may be performed by writing or programming each memory cell of the given row to a first predetermined data state (in this example embodiment the first predetermined data state is logic “0”) using the inventive techniques described above.

In particular, transistor of each memory cell 12 of a given row (for example, memory cells 12 a-12 d) is controlled to store a logic “0”. In this regard, stage one and stage two control signals to implement a clear operation as described above are applied to the gate, the source region and the drain region of the transistor of memory cells 12 a-12 d. In response, the same logic state (for example, logic low or logic “0”) is stored in memory cells 12 a-12 d and the state of memory cells 12 a-12 d are “cleared”.

Thereafter, selected memory cells of the given row may be programmed to the second predetermined logic state. In this regard, the transistors of certain memory cells of a given row are written to the second predetermined logic state in order to store the second predetermined logic state in memory cells. For example, with reference to FIG. 22, memory cells 12 b and 12 c are programmed to logic high or logic “1” by applying (i) 0.5v to the gate (via word line 28 _(i)), (ii) 0v to the source region (via source line 30), and (iii) 2.5v to the drain region (via bit line 32 _(j+1) and 32 _(j+2)), followed by application of −1.0v to the gate (via word line 28 _(i)). In particular, such control signals generate or provide an excess of majority carriers in the electrically floating body region of the transistor of memory cells 12 b and 12 c which corresponds to logic high or logic “1”.

As mentioned above, it is preferred that the source current responsible for impact ionization and/or avalanche multiplication in the floating body is initiated or induced by the control signal (control pulse) applied to the gate of the transistor. Such a signal/pulse may induce the channel impact ionization which raises or increases the potential of the electrically floating body region of the transistor of memory cells 12 b and 12 c and “turns-on” and/or produces a source current in transistor 14. One advantage of the proposed method is that a large amount of the excess majority carriers may be generated and stored in the electrically floating body region of the transistor of memory cells 12 b and 12 c.

Notably, in this example embodiment, memory cells 12 a and 12 d are maintained at logic low (or logic “0”) by applying an inhibit control signal to the drain region of each memory cell 12 a and 12 d. For example, applying 0v to the drain regions of memory cells 12 a and 12 d (via bit lines 32 _(j) and 32 _(j+4)) inhibits writing logic high or logic “1” into memory cells 12 a and 12 d during the selective write operation for memory cells 12 b and 12 c.

A “holding” operation or condition may be used for the other memory cells in memory cell array 10 to minimize and/or reduce the impact of the write operation for memory cells 12 a-12 d connected to word line 28 _(i). With reference to FIGS. 21 and 25, in one embodiment, a holding voltage is applied to the gates of the transistors of other memory cells of memory cell array 10 (for example, each memory cell connected to word lines 28 _(i+1), 28 _(i+2), 28 _(i+3), and 28 _(i+4)). In one example embodiment, a holding voltage approximately in a range of −0.8 volts to −1.6 volts (e.g., −1.2 volts) is applied to the gate of each transistor of the memory cells connected to word lines 28 _(i+1), 28 _(i+2), 28 _(i+3), and 28 _(i+4). In this way, the impact of the write operation of memory cells 12 a-12 d (which are connected to word line 28 _(i)) on the other memory cells of memory cell array 10 is minimized and/or reduced.

A selected row of memory cells may be read by applying read control signals to the associated word line 28 and associated source lines 30 and sensing a signal (voltage and/or current) on associated bit lines 32. In one example embodiment, with reference to FIG. 23, memory cells 12 a-12 d are read by applying (i) 0v to the gate (via word line 28 _(i)), (ii) 0v to the source region (via source line 30) and (iii) a voltage approximately in a range of one (1) volt to 2.2 volts to the drain region (via bit line 32 _(j+1) and 32 _(j+2)). The data write and sense circuitry 36 reads the data state of the memory cells 12 a-12 d by sensing the response to the applied read control signals. In response to the read control signals, memory cells 12 a-12 d generate a source current spike or pulse which is representative of the data state of memory cells 12 a-12 d, as described above with reference to FIGS. 1-5. In this example, memory cells 12 b and 12 c (which were earlier programmed to logic “1”), in response to the read control signals, generate a source current spike which is considerably larger than any channel current. In contrast, in memory cells 12 a and 12 d (which were earlier programmed to logic “0”), the control signals induce, cause and/or produce little to no source current (for example, a considerable, substantial or sufficiently measurable source current). The sense circuitry 36 senses the data state using primarily and/or based substantially on the source current.

Thus, in response to read control signals, the electrically floating body transistor of each memory cell 12 a-12 d generates a source current spike which is representative of the data state stored therein. The data sensing circuitry in data write and sense circuitry 36 determines the data state of memory cells 12 a-12 d based substantially on the source current induced, caused and/or produced in response to the read control signals. Notably, as mentioned above, a read operation may be performed by applying other control signaling techniques.

Again, it may be advantageous to employ a “holding” operation or condition for the other memory cells in memory cell array 10 to minimize and/or reduce the impact of the read operation of memory cells 12 a-12 d. With continued reference to FIG. 23, in one embodiment, a holding voltage is applied to the gates of the transistors of other memory cells of memory cell array 10 (for example, each memory cell connected to word lines 28 _(i+1), 28 _(i+2), 28 ₁₊₃, and 28 _(i+4)). In one example embodiment, a holding voltage approximately in a range of −0.8 volts to −1.6 volts (e.g., −1.2 volts) is applied to the gate of each transistor of the memory cells connected to word lines 28 _(i+1), 28 _(i+2), 28 _(i+3), and 28 _(i+4). In this way, the impact of the read operation of memory cells 12 a-12 d (which are connected to word line 28 _(i)) on the other memory cells of memory cell array 10 is minimized and/or reduced.

The programming and reading techniques described herein may be used in conjunction with a plurality of memory cells arranged in an array of memory cells. A memory array implementing the structure and techniques of the present inventions may be controlled and configured including a plurality of memory cells having a separate source line for each row of memory cells (a row of memory cells includes a common word line). The memory array may use any of the example programming, holding and/or reading techniques described herein. The memory arrays may comprise N-channel, P-channel and/or both types of transistors. Circuitry that is peripheral to the memory array (for example, sense amplifiers or comparators, row and column address decoders, as well as line drivers (not illustrated herein)) may include P-channel and/or N-channel type transistors. Where P-channel type transistors are employed as memory cells in the memory array(s), suitable write and read voltages (for example, negative voltages) are well known to those skilled in the art in light of this disclosure.

The present inventions may be implemented in any electrically floating body memory cell and memory cell array. For example, in certain aspects, the present inventions are directed to a memory array, having a plurality of memory cells each including an electrically floating body transistor, and/or techniques of programming data into and/or reading data from one or more memory cells of such a memory cell array. In this aspect of the inventions, the data states of adjacent memory cells and/or memory cells that share a word line may or may not be individually programmed.

With reference to FIGS. 20A and 20B, memory array 10 may comprise a plurality of memory cells 12 of N-channel type, P-channel type and/or both types of electrically floating body transistors. The memory array 10 includes a plurality of rows and columns (for example, in a matrix form) of memory cells 12.

The circuitry which is peripheral to memory array 10 (for example, data write and sense circuitry 36 (such as, for example, sense amplifiers or comparators), memory cell selection and control circuitry 38 (such as, for example, address decoders and word line drivers)) may include P-channel type and/or N-channel type transistors. Where N-channel type transistors or P-channel type transistors are employed as memory cells 12 in memory array(s) 10, suitable write voltages are known to those skilled in the art.

As mentioned above, memory cells 12 (having electrically floating body transistor 14) and memory cell array 10 of the present inventions may be implemented in an integrated circuit device having a memory portion and a logic portion (see, for example, FIG. 20A), or an integrated circuit device that is primarily a memory device (see, for example, FIG. 20B). Indeed, the present inventions may be implemented in any device having one or more memory cells 12 (having electrically floating body transistors) and/or memory cell arrays 10. For example, with reference to FIG. 20A, an integrated circuit device may include array 10, having a plurality of memory cells 12 (having electrically floating body transistors), data write and sense circuitry, and memory cell selection and control circuitry (not illustrated in detail). The data write and sense circuitry writes data into and senses the data state of one or more memory cells. The memory cell selection and control circuitry selects and/or enables one or more predetermined memory cells 12 to be read by data sense circuitry during a read operation.

For example, the electrically floating body transistor, which programmed (written to), controlled and/or read using the techniques of the present inventions, may be employed in any electrically floating body memory cell, and/or memory cell array architecture, layout, structure and/or configuration employing such electrically floating body memory cells. In this regard, an electrically floating body transistor, which state is read using the techniques of the present inventions, may be implemented in the memory cell, architecture, layout, structure and/or configuration described and illustrated in the following non-provisional U.S. patent applications:

(1) application Ser. No. 10/450,238, which was filed by Fazan et al. on Jun. 10, 2003 and entitled “Semiconductor Device” (now U.S. Pat. No. 6,969,662);

(2) application Ser. No. 10/487,157, which was filed by Fazan et al. on Feb. 18, 2004 and entitled “Semiconductor Device” (U.S. Patent Application Publication No. 2004/0238890);

(3) application Ser. No. 10/829,877, which was filed by Ferrant et al. on Apr. 22, 2004 and entitled “Semiconductor Memory Cell, Array, Architecture and Device, and Method of Operating Same” (U.S. Patent Application Publication No. 2005/0013163);

(4) application Ser. No. 10/840,009, which was filed by Ferrant et al. on May 6, 2004 and entitled “Semiconductor Memory Device and Method of Operating Same” (U.S. Patent Application Publication No. 2004/0228168); and

(5) application Ser. No. 10/941,692, which was filed by Fazan et al. on Sep. 15, 2004 and entitled “Low Power Programming Technique for a One Transistor SOI Memory Device & Asymmetrical Electrically Floating Body Memory Device, and Method of Manufacturing Same” (U.S. Patent Application Publication No. 2005/0063224).

Notably, the memory cells may be controlled (for example, programmed or read) using any of the control circuitry described and illustrated in the above-referenced five (5) U.S. patent applications. For the sake of brevity, those discussions will not be repeated; such control circuitry is incorporated herein by reference. Indeed, all memory cell selection and control circuitry for programming, reading, controlling and/or operating memory cells including electrically floating body transistors, whether now known or later developed, are intended to fall within the scope of the present inventions.

Moreover, the data write and data sense circuitry may include a sense amplifier (not illustrated in detail herein) to read the data stored in memory cells 12. The sense amplifier may sense the data state stored in memory cell 12 using voltage or current sensing circuitry and/or techniques. In the context of a current sense amplifier, the current sense amplifier may compare the cell current to a reference current, for example, the current of a reference cell (not illustrated). From that comparison, it may be determined whether memory cell 12 contained logic high (relatively more majority carriers 34 contained within body region 18) or logic low data state (relatively less majority carriers 34 contained within body region 18). Such circuitry and configurations thereof are well known in the art.

In addition, the present inventions may employ the reference generation techniques (used in conjunction with the data sense circuitry for the read operation) described and illustrated in U.S. Provisional Patent Application Ser. No. 60/718,417, which was filed by Bauser on Sep. 19, 2005, and entitled “Method and Circuitry to Generate a Reference Current for Reading a Memory Cell Having an Electrically Floating Body Transistor, and Device Implementing Same”. The entire contents of the U.S. Provisional Patent Application Ser. No. 60/718,417 are incorporated herein by reference. Further, the present inventions may also employ the read circuitry and techniques described and illustrated in U.S. patent application Ser. No. 10/840,902, which was filed by Portmann et al. on May 7, 2004, and entitled “Reference Current Generator, and Method of Programming, Adjusting and/or Operating Same” (now U.S. Pat. No. 6,912,150). The contents of U.S. Provisional Patent Application Ser. No. 60/718,417 and U.S. Pat. No. 6,912,150 are hereby incorporated by reference herein.

It should be further noted that while each memory cell 12 in the example embodiments (described above) includes one transistor 14, memory cell 12 may include two transistors, as described and illustrated in application Ser. No. 10/829,877, which was filed by Ferrant et al. on Apr. 22, 2004 and entitled “Semiconductor Memory Cell, Array, Architecture and Device, and Method of Operating Same” (U.S. Patent Application Publication No. 2005/0013163). The contents of U.S. Patent Application Publication No. 2005/0013163 are hereby incorporated by reference herein

The electrically floating memory cells, transistors and/or memory array(s) may be fabricated using well known techniques and/or materials. Indeed, any fabrication technique and/or material, whether now known or later developed, may be employed to fabricate the electrically floating memory cells, transistors and/or memory array(s). For example, the present inventions may employ silicon, germanium, silicon/germanium, gallium arsenide or any other semiconductor material (whether bulk-type or SOI) in which transistors may be formed. As such, the electrically floating memory cells may be disposed on or in (collectively “on”) SOI-type substrate or a bulk-type substrate.

Indeed, the electrically floating transistors, memory cells, and/or memory array(s) may employ the techniques described and illustrated in non-provisional patent application entitled “Integrated Circuit Device, and Method of Fabricating Same”, which was filed on Jul. 2, 2004, by Fazan, Ser. No. 10/884,481 (U.S. Patent Application Publication No. 2005/0017240), provisional patent application entitled “One Transistor Memory Cell having Mechanically Strained Electrically Floating Body Region, and Method of Operating Same”, which was filed on Oct. 19, 2005, Ser. No. 60/728,060, by Bassin, and/or provisional patent application entitled “Memory Cell, Array and Device, and Method of Operating Same”, which was filed on Oct. 19, 2005, Ser. No. 60/728,061, by Okhonin et al. (hereinafter collectively “Integrated Circuit Device patent applications”). The contents of the Integrated Circuit Device patent applications are hereby incorporated by reference herein.

Memory array 10 (including SOI memory transistors) further may be integrated with SOI logic transistors, as described and illustrated in the Integrated Circuit Device patent applications. For example, in one embodiment, an integrated circuit device includes memory section (having, for example, partially depleted (PD) or fully depleted (FD) SOI memory transistors 14) and logic section (having, for example, high performance transistors, multiple gate transistors, and/or non-high performance transistors (for example, single gate transistors that do not possess the performance characteristics of high performance transistors).

Further, memory array(s) 10 may comprise N-channel, P-channel and/or both types of transistors, as well as partially depleted and/or fully depleted type transistors. For example, circuitry that is peripheral to the memory array (for example, sense amplifiers or comparators, row and column address decoders, as well as line drivers (not illustrated herein)) may include FD-type transistors (whether P-channel and/or N-channel type). Alternatively, such circuitry may include PD-type transistors (whether P-channel and/or N-channel type). There are many techniques to integrate both PD and/or FD-type transistors on the same substrate (see, for example, application Ser. No. 10/487,157, which was filed by Fazan et al. on Feb. 18, 2004 and entitled “Semiconductor Device” (U.S. Patent Application Publication No. 2004/0238890)). All such techniques, whether now known or later developed, are intended to fall within the scope of the present inventions. Where P-channel type transistors are employed as memory cells 12 in the memory array(s), suitable write and read voltages (for example, negative voltages) are well known to those skilled in the art in light of this disclosure.

Notably, electrically floating body transistor 14 may be a symmetrical or non-symmetrical device. Where transistor 14 is symmetrical, the source and drain regions are essentially interchangeable. However, where transistor 14 is a non-symmetrical device, the source or drain regions of transistor 14 have different electrical, physical, doping concentration and/or doping profile characteristics. As such, the source or drain regions of a non-symmetrical device are typically not interchangeable. This notwithstanding, the drain region of the electrically floating N-channel transistor of the memory cell (whether the source and drain regions are interchangeable or not) is that region of the transistor that is connected to the bit line/sense amplifier.

There are many inventions described and illustrated herein. While certain embodiments, features, attributes and advantages of the inventions have been described and illustrated, it should be understood that many others, as well as different and/or similar embodiments, features, attributes and advantages of the present inventions, are apparent from the description and illustrations. As such, the embodiments, features, attributes and advantages of the inventions described and illustrated herein are not exhaustive and it should be understood that such other, similar, as well as different, embodiments, features, attributes and advantages of the present inventions are within the scope of the present inventions.

As mentioned above, the illustrated/example voltage levels to implement the read and write operations are merely examples. The indicated voltage levels may be relative or absolute. Alternatively, the voltages indicated may be relative in that each voltage level, for example, may be increased or decreased by a given voltage amount (for example, each voltage may be increased or decreased by 0.1, 0.15, 0.25, 0.5, 1 volt) whether one or more of the voltages (for example, the source, drain or gate voltages) become or are positive and negative.

The illustrated/example voltage levels and timing to implement the write and read operations are merely examples. In this regard, in certain embodiments, the control signals increase the potential of electrically floating body region of the transistor of the memory cell which “turns on” or produces a source current in the transistor. In the context of a write operation, the source current generates majority carriers in the electrically floating body region which are then stored. In the context of a read operation, the data state may be determined primarily by, sensed substantially using and/or based substantially on the source current that is responsive to the read control signals and significantly less by the interface channel current component, which is less significant and/or negligible relatively to the bipolar component.

Aspects of the present inventions described herein, and/or embodiments thereof, may include an integrated circuit (IC) device comprising a memory cell consisting essentially of one transistor. The transistor of an embodiment includes a gate, an electrically floating body region configured so that material of the body region extends beyond at least one lateral boundary of the gate, and a source region and a drain region adjacent the body region. The memory cell of an embodiment includes data sense circuitry coupled to the memory cell. The data sense circuitry of an embodiment includes a read-word line coupled to the gate region and a read-bit output coupled to the source region or the drain region.

The body region of the transistor of an embodiment functions as an inherent bipolar transistor.

The body region of the transistor of an embodiment stores a data bit in the form of a charge accumulated in the body region.

The transistor of an embodiment delivers the data bit onto the read-bit line by discharging the body region in response to a shifting logic level on the read-word line.

The shifting logic level on the read-word line of an embodiment provides a gate-to-source voltage of approximately zero volts.

The discharging of an embodiment provides a read current at the read-bit line that is proportional to the current gain of the transistor multiplied by the charge.

The read current of an embodiment is a current spike.

The data sense circuitry of an embodiment determines a data state of the memory cell at least substantially based on the read current.

The transistor of an embodiment delivers the data bit onto the read-bit line by discharging the body region in response to a shifting logic level on a read-source line coupled to the source region or the drain region.

The shifting logic level on the read-source line of an embodiment provides a drain-to-source voltage approximately in a range of one (1) to 2.2 volts.

The initiation of the shifting logic level on the read-word line of an embodiment follows initiation of the shifting logic level on the read-source line.

The gate of the transistor of an embodiment is disposed over a first portion of the body region.

The source region of the transistor of an embodiment adjoins a second portion of the body region that is adjacent the first portion and separates the source region from the first portion.

The drain region of the transistor of an embodiment adjoins a third portion of the body region that is adjacent the first portion and separates the drain region from the first portion.

The IC device of an embodiment includes a first voltage coupled to the gate. The first voltage of an embodiment may cause minority carriers to accumulate in the first portion of the body region.

The minority carriers of an embodiment accumulate at a surface region of the first portion of body region that is juxtaposed or near a gate dielectric which is disposed between the gate and the first portion of the body region.

The region of the transistor of an embodiment that includes the minority carriers is disconnected from the source region by the second portion of the body region.

The region of the transistor of an embodiment that includes the minority carriers is disconnected from the drain region by the third portion of the body region.

The IC device of an embodiment includes a first potential difference coupled between the source and the drain. The first potential difference of an embodiment generates source current in the current channel as a result of impact ionization among the minority carriers.

The IC device of an embodiment includes a second voltage coupled to the gate after and instead of the first voltage. The second voltage of an embodiment causes an accumulation of majority carriers in the first portion of the body region. The majority carriers of an embodiment result in the first data state which is representative of a first charge in the body region.

The IC device of an embodiment includes a second potential difference coupled between the source and the drain. The second potential difference of an embodiment results in a second data state which is representative of a second charge in the body region.

The body region of the transistor of an embodiment includes a first type of semiconductor material and the source region and drain region include a second type of semiconductor material.

The source region of the transistor of an embodiment includes a lightly doped region.

The source region of the transistor of an embodiment includes a highly doped region.

The source region of the transistor of an embodiment includes a lightly doped region and a highly doped region.

The drain region of the transistor of an embodiment includes a lightly doped region.

The drain region of the transistor of an embodiment includes a highly doped region.

The drain region of the transistor of an embodiment includes a lightly doped region and a highly doped region.

The memory cell of an embodiment includes a first data state representative of a first charge in the first portion of the body region and a second data state representative of a second charge in the first portion of the body region.

The IC device of an embodiment includes data write circuitry coupled to the memory cell. The data write circuitry of an embodiment is configured to apply first write control signals to the memory cell to write the first data state and second write control signals to the memory cell to write the second data state.

Aspects of the present inventions described herein, and/or embodiments thereof, may include an integrated circuit device comprising a memory cell consisting essentially of one transistor. The transistor of an embodiment includes a gate, an electrically floating body region partially disposed under the gate, and a source region and a drain region adjacent the body region. One or more of the source region and the drain region of the transistor of an embodiment include a doped region shaped so that a farthermost boundary of the doped region is separated from a portion of the body region underlying the gate. The IC device of an embodiment comprises data sense circuitry coupled to the memory cell and configured to sense a data state of the memory cell. The data sense circuitry of an embodiment is configured to apply read control signals to the memory cell. The read control signals of an embodiment include a first signal applied to the source region or the drain region and a second signal applied to the gate region. The second signal of an embodiment is a voltage pulse having a shorter duration than the first signal.

The second signal of an embodiment produces a gate-to-source voltage of approximately zero volts.

The first signal of an embodiment produces a drain-to-source voltage approximately in a range of one (1) volt to 2.2 volts.

The data sense circuitry of an embodiment is configured to sense the data state of the memory cell. In response to the read control signals the transistor of an embodiment generates a discharge current which is representative of the data state of the memory cell. The data sense circuitry of an embodiment determines the data state of the memory cell at least substantially based on the discharge current.

The discharge current of an embodiment is a current spike.

The initiation of the second signal of an embodiment follows initiation of the first signal.

In response to the second signal the transistor of an embodiment releases the discharge current on a read-bit line coupled to the source region or the drain region. The transistor of an embodiment has a current gain equal to beta, and a magnitude of the discharge current is proportional to a product of the accumulated electric charge multiplied by beta.

The gate of the transistor of an embodiment is disposed over a first portion of the body region and the source region adjoins a second portion of the body region. The second portion of the transistor of an embodiment is adjacent the first portion and separates the source region from the first portion. The drain region of the transistor of an embodiment adjoins a third portion of the body region. The third portion of the transistor of an embodiment is adjacent the first portion and separates the drain region from the first portion.

The memory cell of an embodiment includes a first data state representative of a first charge in the first portion of the body region. The memory cell of an embodiment includes a second data state representative of a second charge in the first portion of the body region.

The IC device of an embodiment includes data write circuitry coupled to the memory cell. The data write circuitry of an embodiment is configured to apply first write control signals to the memory cell to write the first data state and second write control signals to the memory cell to write the second data state. In response to first write control signals, the transistor of an embodiment generates a first source current which substantially provides the first charge in the first portion of the body region.

The first write control signals of an embodiment cause, provide, produce and/or induce the first source current.

The first write control signals of an embodiment include a potential difference applied between the source region and the drain region of the transistor of an embodiment.

The first write control signals of an embodiment include a signal applied to the gate. The signal applied to the gate of the transistor of an embodiment includes a first voltage having a first amplitude and a second voltage having a second amplitude.

The first write control signals of an embodiment include a first potential difference applied between the source region and the drain region of the transistor of an embodiment and a signal applied to the gate of the transistor of an embodiment that includes a first voltage. The first write control signals of an embodiment may cause, provide, produce and/or induce an accumulation of minority carriers in the first portion of the body region of the transistor of an embodiment.

The minority carriers accumulate at a surface region of the first portion of the body region of the transistor of an embodiment. The surface region is disconnected from the source region of the transistor of an embodiment by the second portion of the body region.

The minority carriers of an embodiment accumulate at a surface region of the first portion of the body region of the transistor of an embodiment. The surface region is disconnected from the drain region of the transistor of an embodiment by the third portion of the body region.

The first write control signals of an embodiment cause, provide, produce and/or induce source current in the body region of the transistor of an embodiment as a result of impact ionization among the minority carriers.

The signal applied to the gate of the transistor of an embodiment temporally changes to a second voltage that causes, provides, produces and/or induces an accumulation of majority carriers in the first portion of the body region. The majority carriers of the transistor of an embodiment of an embodiment result in the first data state.

The second write control signals of an embodiment include a second potential difference applied between the source region and the drain region of the transistor of an embodiment and a signal applied to the gate of the transistor of an embodiment that includes the first voltage. The second write control signals of an embodiment prevent the first data state from being written into the first portion of the body transistor.

The second potential difference of an embodiment is relatively less than the first potential difference.

Aspects of the present inventions described herein, and/or embodiments thereof, may include a memory cell consisting essentially of one transistor that includes a body region configured to be electrically floating and a source region and a drain region adjacent the body region. The source region or the drain region of the transistor of an embodiment is coupled to a read-bit line of data sense circuitry. The transistor of an embodiment includes a gate partially disposed over the body region and coupled to a read-word line of the data sense circuitry.

The body region of the transistor of an embodiment functions as an inherent bipolar transistor when an electric charge accumulates within the body region.

The data sense circuitry of an embodiment is configured to sense the data state of the memory cell, wherein, in response to read control signals applied to the memory cell via the read-word line, the transistor of an embodiment generates a discharge current which is representative of the data state of the memory cell. The data sense circuitry of an embodiment determines the data state of the memory cell at least substantially based on the discharge current.

The discharge current of an embodiment is a current spike.

The read control signals of an embodiment include a first signal applied via the read-source line coupled to the source region or the drain region of the transistor of an embodiment and a second signal applied via the read-word line.

The first signal of an embodiment produces a drain-to-source voltage approximately in a range of one (1) volt to 2.2 volts and the second signal produces a gate-to-source voltage of approximately zero volts.

Initiation of the second signal of an embodiment follows initiation of the first signal. The second signal of an embodiment comprises a voltage pulse of shorter duration than the first signal.

The inherent bipolar transistor of an embodiment releases the discharge current on the read-bit line in response to the second signal.

The inherent bipolar transistor of an embodiment has a current gain equal to beta. A magnitude of the discharge current of an embodiment is proportional to a product of the accumulated electric charge multiplied by beta.

The source region of the transistor of an embodiment includes a doped region shaped so that a farthermost boundary of the doped region is separated from a portion of the body region underlying the gate.

The drain region of the transistor of an embodiment includes a doped region shaped so that a farthermost boundary of the doped region is separated from a portion of the body region underlying the gate.

Aspects of the present inventions described herein, and/or embodiments thereof, may include a memory cell consisting essentially of one transistor that includes a body region configured to be electrically floating and a source region and a drain region adjacent the body region. The source region or the drain region of the transistor of an embodiment is coupled to a read-bit line of data sense circuitry. The transistor of an embodiment includes a gate partially disposed over the body region so that material of the body region extends beyond at least one lateral boundary of the gate. The gate of the transistor of an embodiment is coupled to a read-word line of the data sense circuitry.

The body region of the transistor of an embodiment stores a data bit in the form of a charge accumulated in the body region.

The body region of the transistor of an embodiment functions as an inherent bipolar transistor.

The data bit of an embodiment is represented by the charge accumulated within the body region of the transistor of an embodiment. The transistor of an embodiment delivers the data bit onto the read-bit line by discharging the body region in response to a shifting logic level on the read-word line.

The discharging of the body region of the transistor of an embodiment provides a read current at the read-bit line that is proportional to the current gain of the transistor multiplied by the charge.

The read current of an embodiment is a current spike.

The data sense circuitry of an embodiment is configured to sense the data bit. In response to read control signals applied to the memory cell via the read-word line, the transistor of an embodiment generates the read current. The data sense circuitry of an embodiment determines a data state of the memory cell at least substantially based on the read current.

The read control signals of an embodiment include a first signal applied via a read-source line coupled to the source region or the drain region and a second signal applied via the read-word line.

Initiation of the second signal of an embodiment follows initiation of the first signal, wherein the second signal comprises a voltage pulse of shorter duration than the first signal.

Aspects of the present inventions described herein, and/or embodiments thereof, may include a memory cell consisting essentially of one transistor that includes a body region configured to be electrically floating and a gate partially disposed over the body region and coupled to a read-word line of data sense circuitry. The transistor of an embodiment includes a source region and a drain region adjacent the body region. One or more of the source region and the drain region of the transistor of an embodiment include a doped region shaped so that a farthermost boundary of the doped region is separated from a portion of the body region underlying the gate.

Aspects of the present inventions described herein, and/or embodiments thereof, may include a method for reading a memory cell consisting essentially of one transistor. The method of an embodiment comprises applying a first signal to a source or a drain of the transistor. A body region of the transistor of an embodiment is configured to be electrically floating. The method of an embodiment comprises applying a second signal to a gate of the transistor. Initiation of the second signal of an embodiment follows initiation of the first signal. The second signal of an embodiment comprises a voltage pulse of shorter duration than the first signal. The method of an embodiment comprises sensing a read current released by the transistor in response to the second signal.

The method of an embodiment comprises determining a data state of the memory cell at least substantially based on the read current.

The body region of an embodiment functions as an inherent bipolar transistor.

The body region of an embodiment stores a data bit in the form of a charge accumulated in the body region.

The transistor of an embodiment delivers the data bit by discharging the body region in response to the second signal.

The discharging of an embodiment provides the read current and the read current is proportional to the current gain of the transistor multiplied by the charge.

The read current of an embodiment is a current spike.

Aspects of the present inventions described herein, and/or embodiments thereof, may include a method for reading a memory cell. The method of an embodiment comprises coupling a read-source line of data sense circuitry to a source region or a drain region of a transistor of the memory cell. The memory cell of an embodiment consists essentially of the transistor. A body of the transistor of an embodiment is electrically floating. The method of an embodiment comprises coupling a read-word line of the data sense circuitry to a gate of the transistor. The method of an embodiment comprises shifting a logic level of the read-source line and then shifting a logic level of the read-word line. The method of an embodiment comprises sensing a discharge current released by the transistor in response to the shifting logic level of the read-word line. The method of an embodiment comprises determining a data state of the memory cell at least substantially based on the discharge current.

As mentioned above, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of such aspects and/or embodiments. For the sake of brevity, those permutations and combinations will not be discussed separately herein. As such, the present inventions are neither limited to any single aspect (nor embodiment thereof), nor to any combinations and/or permutations of such aspects and/or embodiments.

Moreover, the above embodiments of the present inventions are merely example embodiments. They are not intended to be exhaustive or to limit the inventions to the precise forms, techniques, materials and/or configurations disclosed. Many modifications and variations are possible in light of the above teaching. It is to be understood that other embodiments may be utilized and operational changes may be made without departing from the scope of the present inventions. As such, the foregoing description of the example embodiments of the inventions has been presented for the purposes of illustration and description. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the inventions not be limited solely to the description above. 

The invention claimed is:
 1. A method for reading a memory cell, the method comprising: transitioning a first control signal applied to a source region or a drain region of a transistor of the memory cell from a first voltage level to a second voltage level, the memory cell consisting essentially of the transistor, wherein a body region of the transistor is configured to be electrically floating; transitioning a second control signal applied to a gate of the transistor from a third voltage level to a fourth voltage level, wherein initiation of the second control signal follows initiation of the first control signal, wherein the second control signal comprises a voltage pulse of shorter duration than the first control signal, wherein a difference between the first voltage level and the third voltage level is as small as approximately 0.8 volts, and wherein a difference between the second voltage level and the fourth voltage level is as small as approximately 1.0 volts; and sensing a read current released by the transistor for reading both logic high and logic low data states from the memory cell in response to the second control signal.
 2. The method of claim 1, comprising determining a data state of the memory cell at least substantially based on the read current.
 3. The method of claim 1, wherein the body region functions as a base of an inherent bipolar transistor.
 4. The method of claim 3, wherein the body region stores a data bit in the form of a charge accumulated in the body region.
 5. The method of claim 4, wherein the transistor delivers the data bit by discharging the body region in response to the second control signal.
 6. The method of claim 5, wherein the second control signal provides a gate-to-source voltage of approximately zero volts.
 7. The method of claim 5, wherein the discharging provides the read current and the read current is proportional to the current gain of the transistor multiplied by the charge.
 8. The method of claim 7, wherein the read current is a current spike.
 9. The method of claim 4, wherein the transistor delivers the data bit by discharging the body region in response to the first control signal.
 10. The method of claim 9, wherein the first control signal provides a drain-to-source voltage in a range of one (1) to 2.2 volts.
 11. The method of claim 9, wherein the discharging provides the read current and the read current is proportional to the current gain of the transistor multiplied by the charge.
 12. The method of claim 11, wherein the read current is a current spike.
 13. The method of claim 1, wherein the gate is disposed over a first portion of the body region.
 14. The method of claim 13, wherein the source region adjoins a second portion of the body region that is adjacent the first portion and separates the source region from the first portion.
 15. The method of claim 14, wherein the drain region adjoins a third portion of the body region that is adjacent the first portion and separates the drain region from the first portion.
 16. The method of claim 13, wherein the third voltage level may cause minority carriers to accumulate in the first portion of the body region.
 17. The method of claim 16, wherein the minority carriers accumulate at a surface region of the first portion of body region that is juxtaposed or near a gate dielectric which is disposed between the gate and the first portion of the body region.
 18. The method of claim 16, wherein a region that includes the minority carriers is disconnected from the source region by the second portion of the body region.
 19. The method of claim 16, wherein a region that includes the minority carriers is disconnected from the drain region by the third portion of the body region.
 20. The method of claim 1, wherein the body region includes a first type of semiconductor material and the source region and drain region include a second type of semiconductor material.
 21. The method of claim 20, wherein the source region includes a lightly doped region.
 22. The method of claim 20, wherein the source region includes a highly doped region.
 23. The method of claim 20, wherein the source region includes a lightly doped region and a highly doped region.
 24. The method of claim 20, wherein the drain region includes a lightly doped region.
 25. The method of claim 20, wherein the drain region includes a highly doped region.
 26. The method of claim 20, wherein the drain region includes a lightly doped region and a highly doped region.
 27. A method for reading a memory cell, the method comprising: coupling a read-source line of data sense circuitry to a source region or a drain region of a transistor of the memory cell, the memory cell consisting essentially of the transistor, wherein a body of the transistor is electrically floating; coupling a read-word line of the data sense circuitry to a gate of the transistor; shifting a voltage level of the read-source line from a first voltage level to a second voltage level; shifting a voltage level of the read-word line from a third voltage level to a fourth voltage level; sensing a discharge current released by the transistor for reading both logic high and logic low data states from the memory cell in response to the shifting voltage level of the read-word line; and determining a data state of the memory cell at least substantially based on the discharge current; wherein a difference between the first voltage level and the third voltage level is as small as approximately 0.8 volts, and wherein a difference between the second voltage level and the fourth voltage level is as small as approximately 1.0 volts. 